參數(shù)資料
型號: RN1444
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進程)
文件頁數(shù): 1/9頁
文件大小: 396K
代理商: RN1444
RN1441 RN1444
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1441,RN1442,RN1443,RN1444
Muting And Switching Applications
High emitter-base voltage: V
EBO
= 25V (min)
High reverse h
FE
: reverse h
FE
= 150 (typ.) (V
CE
=
2V, I
C
=
4mA)
Low on resistance: R
ON
= 1
(typ.) (I
B
= 5mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit
Maximum Ratings
(Ta = 25 C)
Marking
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
20
V
Emitter-base voltage
V
EBO
25
V
Collector current
I
C
300
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~150
C
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
H
FE
classification
A
Type No.
B
RN1441
KA
KB
RN1442
LA
LB
RN1443
NA
NB
RN1444
CA
CB
Unit in mm
相關(guān)PDF資料
PDF描述
RN1441 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1442 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1443 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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