- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄381066 > RN1202 (Toshiba Corporation) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) PDF資料下載
參數(shù)資料
| 型號(hào)： | RN1202 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 251K |
| 代理商： | RN1202 |
RN1201~RN1206
2001-06-07
2
Electrical Characteristics
(Ta = 25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
nA
Collector cut-off current
RN1201~1206
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
RN1201
―
0.82
―
1.52
RN1202
―
0.38
―
0.71
RN1203
―
0.17
―
0.33
RN1204
―
V
EB
= 10V, I
C
= 0
0.082
―
0.15
RN1205
―
0.078
―
0.145
Emitter cut-off current
RN1206
I
EBO
―
V
EB
= 5V, I
C
= 0
0.074
―
0.138
mA
RN1201
―
30
―
―
RN1202
―
50
―
―
RN1203
―
70
―
―
RN1204
―
80
―
―
RN1205
―
80
―
―
DC current gain
RN1206
h
FE
―
V
CE
= 5V, I
C
= 10mA
80
―
―
―
Collector-emitter
saturation voltage
RN1201~1206
V
CE (sat)
―
I
C
= 5mA,
I
B
= 0.25mA
―
0.1
0.3
V
RN1201
―
1.1
―
2.0
RN1202
―
1.2
―
2.4
RN1203
―
1.3
―
3.0
RN1204
―
1.5
―
5.0
RN1205
―
0.6
―
1.1
Input voltage (ON)
RN1206
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
0.7
―
1.3
V
RN1201~1204
―
1.0
―
1.5
Input voltage (OFF)
RN1205~1206
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
0.5
―
0.8
V
Translation frequency
RN1201~1206
f
T
―
V
CE
=10V, I
C
= 5mA
―
250
―
MHz
Collector output
capacitance
RN1201~1206
C
ob
―
V
CB
= 10V, I
E
= 0,
f = 1MHz
―
3
6
pF
RN1201
―
3.29
4.7
6.11
RN1202
―
7
10
13
RN1203
―
15.4
22
28.6
RN1204
―
32.9
47
61.1
RN1205
―
1.54
2.2
2.86
Input Resistor
RN1206
R1
―
―
3.29
4.7
6.11
k
RN1201~1205
―
0.9
1.0
1.1
RN1205
―
0.0421 0.0468 0.0515
Resistor Ratio
RN1206
R1/R2
―
―
0.09
0.1
0.11
―
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN1203 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1204 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1205 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1206 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1207 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN1202(F) | 制造商:Toshiba 功能描述:NPN 50V 100mA 10 / 10 MINI Bulk |
| RN1203 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1203(F) | 制造商:Toshiba 功能描述:NPN 50V 100mA 22 / 22 MINI 制造商:Toshiba 功能描述:NPN 50V 100mA 22 / 22 MINI Bulk |
| RN1204 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| RN1204(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Digital BJT NPN 50V 100mA 3-Pin Mini Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。