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參數(shù)資料
| 型號(hào)： | RMWL38001 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 37-40 GHz Low Noise Amplifier MMIC |
| 中文描述： | 37-40 GHz的單片低噪聲放大器 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 382K |
| 代理商： | RMWL38001 |
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Recommended
Procedure
for Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VDS) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1:
Turn off RF input power.
Step 2:
Connect the DC supply grounds to the
grounds of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3:
Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4:
Adjust gate bias voltage to set the quiescent
current of Idq=50 mA.
Step 5:
After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Performance
Data
RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance,
Vd=4V, Idq=50mA, Chip Bonded into 50 ohm Test Fixture
-30
-20
-10
0
10
20
30
0
10
20
30
40
50
Frequency (GHz)
S
S21
S22
S11
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
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