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參數(shù)資料
| 型號(hào)： | RMWB11001 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 11 GHz Buffer Amplifier MMIC |
| 中文描述： | 10500 MHz - 11700 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2 X 1.30, DIE |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 355K |
| 代理商： | RMWB11001 |
2004 Fairchild Semiconductor Corporation
RMWB11001 Rev. C
R
Figure 1. Chip Layout and Bond Pad Locations
Chip Size is 2.0mm x 1.3mm X 100μm. Back of chip is RF and DC Ground.
Figure 2. Recommended Application Schematic Circuit Diagram
0.5
0.11
0.577
2.0
1.3
0.0
1.3
0.65
1.828
0.106
0.0
0.0
0.0
0.567
0.720
0.873
0.567
1.145
2.0
0.873
0.720
Drain Supply
Vd=+4 V
Gate
Supply
Vg
Ground
(Back of Chip)
Output Power
Detector Voltage
Vdet
MMIC Chip
RF OUT
RF IN
100pF
100pF
10,000pF
L
L
L
L
100pF
10,000pF
L
L
L
100pF
L = Bond Wire
Inductance
3 k
Note
: Detector delivers approx.
0.5V DC into 3k
load resistor
for >+18 dBm output power. If
output power level detection is
not desired, do not make
connection to detector bond
pad.
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| RMWB12001 | 12 GHz Buffer Amplifier MMIC |
| RMWB24001 | 24 GHz Buffer Amplifier MMIC |
| RMWB33001 | 33 GHz Buffer Amplifier MMIC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RMWB12001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:12 GHz Buffer Amplifier MMIC |
| RMWB24001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:24 GHz Buffer Amplifier MMIC |
| RMWB33001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:33 GHz Buffer Amplifier MMIC |
| RMWL38001 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-40 GHz Low Noise Amplifier MMIC |
| RMWP23001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:21-24 GHz Power Amplifier MMIC |
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