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參數資料
| 型號： | RMWB11001 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 11 GHz Buffer Amplifier MMIC |
| 中文描述： | 10500 MHz - 11700 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2 X 1.30, DIE |
| 文件頁數： | 2/6頁 |
| 文件大小： | 355K |
| 代理商： | RMWB11001 |
2004 Fairchild Semiconductor Corporation
RMWB11001 Rev. C
R
Electrical Characteristics
(At 25°C), 50
system, Vd = +4V, Quiescent Current (Idq) = 36mA
Note:
1:
Typical range of gate voltage is -0.8 to 0.2V to set typical Idq of 36mA.
Functional Block Diagram
1
Note:
1:
Detector delivers approx. 0.5V DC into 3k
detector bond pad.
load resistor for > +18dBm output power. If output power level detection is not desired, do not make connection to
Parameter
Min
10.5
Typ
Max
11.7
Units
GHz
V
dB
dB
dBm
mA
%
dB
dB
dB
V
Frequency Range
Gate Supply Voltage
Gain Small Signal (Pin = -10dBm)
Gain Variation vs. Frequency
Power Output Saturated: (Pin = 2dBm)
Drain Current at Psat (Pin = 2dBm)
Power Added Efficiency (PAE): at Psat
Input Return Loss (Pin = -10dBm)
Output Return Loss (Pin = -10dBm)
Noise Figure
Detector Voltage (Pout = +18dBm)
1
(Vg)
-0.5
21
18
0.5
17
19
55
35
13
18
4
0.5
RF IN
RF OUT
Ground
(Back of Chip)
Drain Supply
Vd2
Drain Supply
Vd1
MMIC Chip
Output Power
Detector Voltage Vdet
Gate Supply
Vg
相關PDF資料 |
PDF描述 |
|---|---|
| RMWB12001 | 12 GHz Buffer Amplifier MMIC |
| RMWB24001 | 24 GHz Buffer Amplifier MMIC |
| RMWB33001 | 33 GHz Buffer Amplifier MMIC |
| RMWP23001 | 21-24 GHz Power Amplifier MMIC |
| RMWP26001 | 24-26.5 GHz Power Amplifier MMIC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RMWB12001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:12 GHz Buffer Amplifier MMIC |
| RMWB24001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:24 GHz Buffer Amplifier MMIC |
| RMWB33001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:33 GHz Buffer Amplifier MMIC |
| RMWL38001 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-40 GHz Low Noise Amplifier MMIC |
| RMWP23001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:21-24 GHz Power Amplifier MMIC |
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