參數(shù)資料
型號: RMPA5251
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: 4.90-5.85 GHz InGaP HBT Linear Power Amplifier
中文描述: 4900 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: 3 X 3 MM, 0.90 MM HEIGHT, LEADLESS, QFN-16
文件頁數(shù): 6/10頁
文件大?。?/td> 499K
代理商: RMPA5251
2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
R
12) Apply input RF power to SMA connector pin RF IN. Currents on collector pins will vary depending on the input drive
level.
13) Vary positive voltage VL from +2.4V to +0.5V to shut down the amplifier or alter the power level.
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence above.
Note:
1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
2. VM may be adjusted from +2.9 to +3.3V to adjust bias current operation. See Typical Characteristics.
Package Outline
Application Information
Precautions to Avoid Permanent Device Damage:
Static Sensitivity:
Follow ESD precautions to protect against ESD damage:
A properly grounded static-dissipative surface on which to place devices.
Static-dissipative floor or mat.
A properly grounded conductive wrist strap for each person to wear while handling devices.
Shut down current
fl
ow into the pins:
Pin
VL
VC (total)
VM (total)
Current
<1 nA
<1 nA
<1.9 mA
Dimensions in inches [mm]
5251
YWWX
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