參數(shù)資料
型號(hào): RMPA5251
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: 4.90-5.85 GHz InGaP HBT Linear Power Amplifier
中文描述: 4900 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: 3 X 3 MM, 0.90 MM HEIGHT, LEADLESS, QFN-16
文件頁數(shù): 2/10頁
文件大小: 499K
代理商: RMPA5251
2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
R
Absolute Ratings
15
Notes:
3. Not measured 100% in production.
4. P
measured at P
5. Measured at P
6. P
is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
12. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50é
13. Measured from Device On signal turn on, (Logic High) to the point where RF POUT stabilizes to 0.5dB.
14. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.
15. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
corresponding to power detection threshold.
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
system
Bias Current at pin VM
P1dB Compression
Current @ P1dB Comp
Standby Current
Shutdown Current (VM=0V)
Input Return Loss
Output Return Loss
Detector Output at P1dB Comp
Detector P
OUT
Threshold
Frequency
2
Harmonic Output at P1dB
3rd Harmonic Output at P1dB
Logic Shutdown Control Pin (VL):
Device Off
Device On
Logic Current
Turn-on Time
Turn-off Time
Spurious (Stability)
8
16
26
425
1.9
<1.0
12
10
2
7.0
16
26
425
1.9
<1.0
16
10
2
7.0
mA
dBm
mA
mA
μA
dB
dB
V
dBm
GHz
dBc
dBc
7
7
9
3, 4
4.90
5.35
5.15
5.85
nd
-30
-35
-30
-35
0.0
2.4
10
<1
<1
-65
0.8
0.0
2.4
100
<1
<1
-65
0.8
V
V
μA
μS
μS
dBc
2.0
2.0
13
14
Symbol
Parameter
Value
4.0
Units
V
VC1, VC2
IC1–IC3
Positive Supply Voltage
Supply Current
IC1
IC2
IC3
Voltage Mirror
Logic Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
50
150
500
4
5
10
mA
mA
mA
V
V
dBm
°C
°C
VM
V
L
P
IN
T
CASE
T
STG
-40 to +85
-55 to +150
Parameter
Minimum
Typical
Maximum
Minimum
Typical
Maximum
Unit
Electrical Characteristics
12
Single Tone (Continued)
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