參數(shù)資料
型號(hào): RMPA2456
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
中文描述: 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: 3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, LEADLESS PACKAGE-16
文件頁數(shù): 1/8頁
文件大小: 935K
代理商: RMPA2456
2005 Fairchild Semiconductor Corporation
RMPA2456 Rev. C
1
www.fairchildsemi.com
March 2005
R
RMPA2456
2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Features
31.5dB small signal gain
27dBm output power @ 1dB compression
100mA total current at 19dBm modulated power out
2.8% EVM at 19 dBm modulated power out
3.3V supply operation
Power saving shutdown options (bias control)
Integrated power detector with 20dB dynamic range
Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package
Internally matched to 50 Ohms and DC blocked RF input/
output
Optimized for use in 802.11b/g applications
General Description
The RMPA2456 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. The on-
chip detector provides power sensing capability while the bias
control provides power saving shutdown capability. The PA’s
industry leading low power consumption and excellent linearity
are achieved using our InGaP Heterojunction Bipolar Transistor
(HBT) technology.
Device
Electrical Characteristics
(176 μs burst time, 100 μs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
1
802.11g OFDM Modulation
Notes:
1. VC1, VC2, VC3 = 3.3V, VM123 = 3.3V, T
A
= 25°C, PA is constantly biased, 50
system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P
OUT
measured at P
IN
corresponding to power detection threshold.
Parameter
Min
Typ
Max
Units
Frequency
2.4
2.5
GHz
Collector Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Current
3.3
mA
Gain
31.5
dB
Total Current @ 19dBm P
OUT
100
mA
EVM @ 19dBm P
OUT2
2.8
%
Detector Output @ 19dBm P
OUT
775
mV
Detector Threshold
3
5
dBm
Preliminary
相關(guān)PDF資料
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