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參數(shù)資料
| 型號： | RMPA2550 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 4 MM, 0.90 MM HEIGHT, LOW PROFILE, LEADLESS, QFN-20 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 838K |
| 代理商： | RMPA2550 |
2004 Fairchild Semiconductor Corporation
August 2004
RMPA2550 Rev. D
R
RMPA2550
2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
General Description
The RMPA2550 is a dual frequency band power amplifier
designed for high performance WLAN applications in the
2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The
single low profile 20 pin 3 x 4 x 0.9 mm package with
internal matching on both input and output to 50
minimizes next level PCB space and allows for simplified
integration. The two on-chip detectors provide power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Features
Dual band operation in a single package design
26 dB modulated gain 2.4 to 2.5 GHz band
27 dB modulated gain 5.15 to 5.85 GHz band
26 dBm output power @ 1 dB compression both
frequency bands
2.0% EVM at 18 dBm modulated Pout, 2.45 GHz
2.3% EVM at 18 dBm modulated Pout, 5.45 GHz
3.3 V single positive supply operation
Adjustable bias current operation
Two power saving shutdown options (bias and logic
control)
Separate integrated power detectors with 20 dB dynamic
range
Low profile 20 pin, 3 x 4 x 0.9 mm standard
QFN leadless package
Internally matched to 50 ohms
Optimized for use in 802.11a/b/g
applications
Device
Electrical Characteristics
Modulation (with 176 μs burst time, 100μs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Minimum
Typical
Frequency
2.4
Supply Voltage
3.0
3.3
Gain
24.5
26
Total Current @ 18dBm P
OUT
150
Total Current @ 19dBm P
OUT
157
EVM @ 18dBm P
2.0
EVM @ 19dBm P
3.0
Detector Output @ 19dBm P
OUT
508
Detector Threshold
5.0
P
OUT
Spectral Mask Compliance
21.0
1,3
802.11g/a OFDM
Electrical Characteristics
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current
First Sidelobe Power
Second Sidelobe Power
Max P
OUT
Spectral Mask Compliance
3,6
802.11b CCK
Notes:
1:
VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50
or 5 GHz operation.
2:
Percentage includes system noise floor of EVM=0.8%.
3:
Not measured 100% in production.
4:
P
measured at P
corresponding to power detection threshold.
5:
Measured at P
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6:
VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, P
=+23 dBm, 50
7:
P
IN
is adjusted to point where performance approaches spectral mask requirements.
system. VL adjusted for either 2.4
system. Satisfies spectral mask.
Maximum
2.5
3.6
28
182
189
2.5
3.5
600
7.0
Minimum
5.15
3.0
25.5
Typical
5.85
3.6
29
260
267
3.5
4.5
865
7.0
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
3.3
27
228
235
2.5
3.5
780
5.0
21.0
OUT2
OUT2
4
5,7
Minimum
2.4
3.0
24.5
Typical
Maximum
2.5
3.6
28
Unit
GHz
V
dB
mA
dBc
dBc
dBm
3.3
26
250
-40
-55
7
24.0
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