參數(shù)資料
型號: RMPA2450
廠商: Fairchild Semiconductor Corporation
英文描述: 2.4-2.5 GHz GaAs MMIC Power Amplifier
中文描述: 2.4-2.5 GHz的砷化鎵單片功率放大器
文件頁數(shù): 3/6頁
文件大?。?/td> 155K
代理商: RMPA2450
2004 Fairchild Semiconductor Corporation
RMPA2450 Rev. C
R
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
The following briefly describes a procedure for evaluating
the high efficiency PHEMT amplifier packaged in a surface
mount package. It may be noted that the chip is a fully
monolithic amplifier for ISM band applications. Figure 1
shows the functional block diagram of the packaged
product.
Test Fixture
Figure 2 shows the outline and pin-out descriptions for the
packaged device. A typical test fixture schematic showing
external bias components is shown in Figure 3. Figure 4
shows typical layout of an evaluation board corresponding
to the schematic diagram. The following should be noted:
(1) Package pin designations are as shown in Figure 2.
(2) Vg1, Vg2 are the Gate Voltages (negative) applied at
the pins of the package
(3) Vgg1 = Vgg2 = Vgg is the negative supply voltage at
the evaluation board terminal
(4) Vd1, Vd2 are the Drain Voltages (positive) applied at
the pins of the package
(5) Vdd1 = Vdd2 = Vdd is the positive supply voltage at the
evaluation board terminal
Test Procedure for the Evaluation Board
(RMPA2450-TB)
The following sequence of procedure must be followed to
properly test the power amplifier:
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2)
WHILE DRAIN VOLTAGES (VD1,VD2) ARE PRESENT
MAY DAMAGE THE AMPLIFIER.
Step 1:
Turn off RF input power.
Step 2:
Use GND terminal of the evaluation board for
DC supplies.
Apply gate supply voltages of typical -0.5V to
evaluation board terminals Vgg.
Step 3:
Apply drain supply voltages of +5.0V to evaluation
board terminals Vdd.
Adjust gate supply voltage, if needed, to set the
desired quiescent bias currents Idq (or to the
values as shown on the data summary
accompanying the product samples).
Step 4:
After the bias condition is established, RF input
signal may now be applied.
Step 5:
Follow turn-off sequence of:
(i) Turn off RF Input Power (ii) Turn down and off
Vdd (iii) Turn down and off Vgg
相關(guān)PDF資料
PDF描述
RMPA2451 2.4?2.5 GHz GaAs MMIC Power Amplifier
RMPA2451-TB 2.4?2.5 GHz GaAs MMIC Power Amplifier
RMPA2453 2.4?2.5 GHz InGaP HBT Linear Power Amplifier
RMPA2455 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
RMPA2456 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RMPA2451 制造商:Rochester Electronics LLC 功能描述:- Bulk
RMPA2451-TB 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:2.4?2.5 GHz GaAs MMIC Power Amplifier
RMPA2453 功能描述:射頻放大器 2.4-2.5 GHz InGaP HBT Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
RMPA2455 功能描述:射頻放大器 2.4-2.5 GHz 1 Watt InGaP HBT RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
RMPA2456 制造商:Fairchild Semiconductor Corporation 功能描述: