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參數(shù)資料
| 型號： | RMPA1965 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module |
| 中文描述： | 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1 MM HEIGHT, LEAD FREE PACKAGE-8 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 111K |
| 代理商： | RMPA1965 |
2
www.fairchildsemi.com
RMPA1965 Rev. I
R
Absolute Ratings
1
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
1
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V, f = 1880MHz and load VSWR
≤
1.2:1, unless otherwise
noted.
2. All phase angles.
3. Guaranteed by design.
Symbol
Parameter
Value
Units
Vcc1, Vcc2
Supply Voltages
5.0
V
Vref
Reference Voltage
2.6 to 3.5
V
Vmode
Power Control Voltage
3.5
V
Pin
RF Input Power
+10
dBm
T
STG
Storage Temperature
-55 to +150
°C
Symbol
Parameter
Min
Typ
Max
Units
Comments
f
Operating Frequency
1850
1910
MHz
CDMA Operation
SSg
Small-Signal Gain
26
dB
Po = 0dBm
Gp
Power Gain
27
24
dB
dB
Po = +28 dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
Po
Linear Output Power
28
16
dBm
dBm
Vmode = 0V
Vmode
≥
2.0V
PAEd
PAEd (digital) @ +28dBm
40
%
Vmode = 0V
PAEd (digital) @ +16dBm
9
%
Vmode
≥
2.0V
Vmode
≥
2.0V, Vcc = 1.4V
PAEd (digital) @ +16dBm
21
%
Itot
High Power Total Current
460
mA
Po = +28dBm, Vmode = 0V
Low Power Total Current
120
mA
Po = +16dBm, Vmode
≥
2.0V
Adjacent Channel Power Ratio
IS-95
ACPR1
±1.25MHz Offset
-50
-52
dBc
dBc
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
ACPR2
±2.25MHz Offset
-60
-68
dBc
dBc
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode
≥
2.0V
General Characteristics
VSWR
Input Impedance
2.0:1
NF
Noise Figure
4
dB
Rx No
Receive Band Noise Power
Harmonic Suppression
3
Spurious Outputs
2, 3
Ruggedness w/ Load Mismatch
3
-139
dBm/Hz
Po
≤
+28dBm; 1930 to 1990MHz
Po
≤
+28dBm
Load VSWR
≤
5.0:1
2fo-5fo
-50
dBc
S
-60
dBc
10:1
No permanent damage.
Tc
Case Operating Temperature
-30
85
°C
DC Characteristics
Iccq
Quiescent Current
45
mA
Vmode
≥
2.0V
Po
≤
+28dBm
Iref
Reference Current
5
mA
Icc(off)
Shutdown Leakage Current
1
5
μA
No applied RF signal.
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