參數(shù)資料
型號: RMPA19000
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: 18-22 GHz Power Amplifier MMIC
中文描述: 18000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 4.45 X 3.50 MM, 0.05 MM HEIGHT, DIE
文件頁數(shù): 6/8頁
文件大?。?/td> 232K
代理商: RMPA19000
2004 Fairchild Semiconductor Corporation
RMPA19000 Rev. C
R
C1
0.1
μ
F
C2
0.47
μ
F
LM2941T
U1A
7400
R1
3.0k
R3
1.0k
D2
D1N6098
+6V
D3
D1N6098
+2.62V
R4
1.2k
*
R2
6.8k
U2
0
C5
0.1
μ
F
MMIC_–VG
0
C3
22
μ
F
R6
1k
R5
3k
0
0
C4
0.1
μ
F
R7
8.2k
*
Adj. For –Vg
–5V Off:
–5V On:
+3.33V
+1.80V
*
0
0
0
R8
1.0k
0
1
2
3
0
4
3
2
1
5
–5V
MMIC_+VDD
CNT
IN
GND
OUT
ADJ
AD820/AD
+
V-
V+
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1:
Turn off RF input power.
Step 2:
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Connect the DC supply grounds to the ground of
Step 3:
+5V to Vd.
Slowly apply positive drain bias supply voltage of
Step 4:
current of Idq = 600mA.
Adjust gate bias voltage to set the quiescent
Step 5:
signal may now be applied at the appropriate frequency
band.
After the bias condition is established, the RF input
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
An example auto bias sequencing circuit to apply negative
gate voltage and positive drain voltage for the above
procedure is shown below.
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