參數(shù)資料
型號： RMPA0913C-58
廠商： Electronic Theatre Controls, Inc.
英文描述： 3.5V AMPS/CDMA Power Amplifier
中文描述： 3.5V之間的AMPS / CDMA功放
文件頁數(shù)： 1/6頁
文件大小： 257K
代理商： RMPA0913C-58
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 30, 2000
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMPA0913C-58
3.5V AMPS/CDMA Power Amplifier
Description
Parameter
Frequency Range
Gain (Small Signal)
Gain Variation vs Temp
Gain Linearity
(0 dBm
≤
Pout
≤
28.5 dBm) -1.5
Noise Power (869-894 MHz)
Input VSWR (50
)
Stability (All spurious)
1
Harmonics (Po
≤
31.5 dBm)
Power Out
Vdd=3.5V, Pin=7 dBm
Min
824
Typ
Max
849
Unit
MHz
dB
dB/°C
30
-0.02
+0.0
-140
2.0:1
-70
-35
dB
dBm/Hz
---
dBc
dBc
32.5
dBm
Positive supply voltage of 3.5V, nominal
Power Added Efficiency of 56%, typical, at power out of 31.5 dBm
Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm
Small outline metal based quad plastic package
Features
Notes:
1.
2.
Source/Load VSWR (All Angles)
≤
3:1 In-Band, Load VSWR (All Angles)
≥
20:1
Out of Band, Valid over Case Operating Temperature Range.
Po
≤
28.5 dBm at Vdd=3.5V; CDMA Waveform measured using the ratio of the average power within a 1.23 MHz channel and within a 30
kHz bandwidth at the specified offset.
Vg1 adjusted for Idq (stage 1) = 35 mA, Vg2 adjusted for Idq (stage 2) = 155 mA.
3.
Electrical
Characteristics
(Specifications at
25
o
C operating free
air temperature
unless otherwise
stated)
Parameter
Efficiency
Pin = 7 dBm, Vdd= 3.5V
Po = 31.5 dBm, Vdd = 3.5V
Po = 28.5 dBm , Vdd= 3.5V
Po = 10 dBm , Vdd= 3.5V
ACPR
2
(Offset
≥
± 900 kHz)
(Offset
≥
± 1.98 MHz)
Noise Figure (over temp)
Vdd
Vg1, Vg2 (<4 mA)
3
Case Operating Temp
Min
Typ
Max
Unit
62
56
40
1.5
48
63
%
%
%
%
dBc
dBc
dB
Volts
4.5
3.5
-1.75
-40
-0.25 Volts
+85
°C
The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the
824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip
matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for
increased power added efficiency and linearity.The device uses Raytheon’s Pseudomorphic High Electron Mobility
Transistor (pHEMT) process.
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Units
Positive DC Voltage
Negative DC Voltage
Simultaneous (Vd-Vg)
RF Input Power (from 50-Ohm source)
Operating Case Temperature (Case)
Storage Temperature Range
Thermal Resistance
Vd1,Vd2
Vg1,Vg2
Vdg
P
IN
T
C
T
Stg
RTj-c
+ 9
- 6
+12
+10
Volts
Volts
Volts
dBm
°C
°C
°C/W
-30 to 110
-35 to 110
15
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