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參數(shù)資料
| 型號(hào)： | RMDA1840 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 18-40 GHz Broad Band Driver Amplifier MMIC |
| 中文描述： | 18-40 GHz的寬帶驅(qū)動(dòng)放大器單片 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 389K |
| 代理商： | RMDA1840 |
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 15, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 4.67 mm x
2.0 mm x 100
μ
m. Back
of chip is RF and DC
ground
Dimensions in mm
0.0
4.67
1.50
1.23
0.11
2.35
3.22
3.84
2.44
3.16
4.15
4.57
0.0
2.00
1.06
0.83
0.60
Figure 3
Recommended
Application Schematic
Circuit Diagram
Note:
For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used
to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
L
Drain Supply
Vd = +5 V
100pF
L
100pF
10,000pF
L
L
100pF
100pF
10,000pF
L
L
L
L
L
L
L = Bond Wire Inductance
Ground
(Back of Chip)
MMIC Chip
RF OUT
RF IN
100pF
10,000pF
Gate Supply
Vg
10,000pF
L
L
L
L
L
L
L
L
100pF
100pF
100pF
L
L
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
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