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參數(shù)資料
| 型號： | RMBA19500 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | PCS 2 Watt Linear GaAs MMIC Power Amplifier |
| 中文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SMD, 12 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 93K |
| 代理商： | RMBA19500 |
2003 Fairchild Semiconductor Corporation
RMBA19500 Rev. C
R
Figure 4. Layout of Test Evaluation Board (RMBA19500-TD, G655971)
Test Procedure for the Evaluation Board (RMBA19500-TB)
CAUTION: LOSS OF GATE VOLTAGES (Vg1, Vg2,
Vg3) WHILE CORRESPONDING DRAIN VOLTAGES
(Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test
the amplifier. (It is necessary to add a fan to provide air
cooling across the heat sink of RMBA19500.)
Step 1:
Turn off RF input power.
Step 2:
ground of the DC supplies. Set Vgg1, Vgg2 and Vgg3 to
-3V (pinch-off).
Use GND terminal of the evaluation board for the
Step 3:
board terminal Vdd ensuring that there is no short.
Slowly apply drain supply voltages of +7V to the
Step 4:
(with no RF applied) increases to Idq12 as per supplied
result sheet. Then adjust Vgg3 until the total drain current
becomes equal to the sum of Idq12 and Idq3.
Adjust Vgg12 up from -3V until the drain current
Step 5:
signal may now be applied at the appropriate frequency
band and appropriate power level.
After the bias condition is established, RF input
Step 6:
Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltage Vdd.
(iii) Turn down and off gate voltages Vgg1, Vgg 2 and
Vgg3.
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