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參數(shù)資料
| 型號： | RMBA19500 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | PCS 2 Watt Linear GaAs MMIC Power Amplifier |
| 中文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SMD, 12 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 93K |
| 代理商： | RMBA19500 |
2003 Fairchild Semiconductor Corporation
RMBA19500 Rev. C
R
Electrical Characteristics
2
Notes:
2. V
3. 9 Channel Forward Link QPSK Source; 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel
at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc.
4. OIP3 specifications are achieved for power output levels of 27 and 30dBm per tone with tone spacing of 1.25MHz at band-center with adjusted supply and bias
conditions of Vdd = 6.5V and IdqTotal = 625mA (see Note 5).
5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve IDQTOTAL = 625mA can be used with
nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been optimized for CDMA operation. IDQ1, 2 and IDQ3 (or IDQTOTAL) can be adjusted
to optimize the linearity of the amplifier for other modulation systems.
= 7.0V, T
= 25°C. Part mounted on evaluation board with input and output matching to 50
.
The device requires external input and output matching to 50
as shown in Figure 3 and the Parts List.
Parameter
Min
1930
Typ
Max
1990
Units
MHz
dB
Frequency Range
Gain (Small Signal) Over 1930–1990MHz
Gain Variation:
Over Frequency Range
Over Temperature Range
Noise Figure
Linear Output Power: for CDMA
OIP3
PAE @ 33dBm Pout
Input VSWR (50
)
Drain Voltage (Vdd)
Gate Voltage (VG1, 2 and VG3)
Quiescent Currents (I
Thermal Resistance (Channel to Case) R
30
±1.0
±1.5
6
dB
dB
dB
dBm
dBm
%
3
33
4
43
24
2:1
7.0
V
V
5
-2
-0.25
DQ1, 2
and I
DQ3
)
5
180, 445
11
mA
°C/W
JC
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