參數(shù)資料
型號(hào): RMBA09501
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: Cellular 2 Watt Linear GaAs MMIC Power Amplifier
中文描述: 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SMD, 12 PIN
文件頁數(shù): 5/7頁
文件大?。?/td> 95K
代理商: RMBA09501
2004 Fairchild Semiconductor Corporation
RMBA09501 Rev. C
R
Figure 4. Layout of Test Evaluation Board (RMBA09501-TD, G657471)
Test Procedure for the Evaluation Board (RMBA09501-TB)
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2)
WHILE CORRESPONDING DRAIN VOLTAGES (Vdd)
ARE PRESENT CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test
the amplifier. (It is necessary to add a fan to provide air
cooling across the heat sink of RMBA09501.) Note:
Vdd1, 2 are tied together.
Step 1:
Turn off RF input power.
Step 2:
ground of the DC supplies. Slowly apply gate supply
voltages as specified on results sheet supplied with test
board to the board terminals Vgg1 and Vgg2.
Use GND terminal of the evaluation board for the
Step 3:
board terminals Vdd1, 2. Adjust Vgg to set the total
quiescent current Idq1 and Idq2 (with no RF applied) Idq
as per supplied result sheet. Gate supply voltages (Vgg
i.e., Vgg1, Vgg2) may be adjusted, only if quiescent
current (Idq1 and Idq2) values desired are different from
those noted on the data summary supplied with product
samples.
Slowly apply drain supply voltages of +7.0V to the
Step 4:
signal may now be applied at the appropriate frequency
band and appropriate power level.
After the bias condition is established, RF input
Step 5:
Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltages Vdd1, 2.
(iii) Turn down and off gate voltages Vgg1 and Vgg2.
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