參數資料
型號: RMBA09501
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: Cellular 2 Watt Linear GaAs MMIC Power Amplifier
中文描述: 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SMD, 12 PIN
文件頁數: 2/7頁
文件大小: 95K
代理商: RMBA09501
2004 Fairchild Semiconductor Corporation
RMBA09501 Rev. C
R
Electrical Characteristics
2
Notes:
2. V
3. 9 Channel Forward Link QPSK Source; 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel
at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc.
4. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve IDQTOTAL = 550mA can be used with
nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been optimized for CDMA operation. IDQ1 and IDQ2 (or IDQTOTAL) can be adjusted to
optimize the linearity of the amplifier for other modulation systems.
5. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25MHz at bandcenter.
= 7.0V, T
= 25°C. Part mounted on evaluation board with input and output matching to 50
.
The device requires external input and output matching to 50
as shown in Figure 3 and the Parts List.
Parameter
Min
869
Typ
Max
894
Units
MHz
dB
Frequency Range
Gain (Small Signal)
Gain Variation:
Over Frequency Range
Over Temperature Range
Noise Figure
Linear Output Power: for CDMA
Idd @ 33dBm Pout – 7V
PAE @ 33dBm Pout
Input VSWR (50
RF Input Power
Drain Voltage (V
Gate Voltages (VG
Quiescent Currents (IDQ1, IDQ2)
Thermal Resistance (Channel to Case) Rjc
35
±1.5
±2.5
6
dB
dB
dB
dBm
dBm
A
%
3
33
5
43
1.0
28.5
2:1
+1
7.0
)
dBm
V
V
mA
°C/W
DD
)
1
, VG
2
)
4
-2
-0.25
4
150, 400
11
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參數描述
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