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參數(shù)資料
| 型號： | RJK4512DPE-00-J3 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switc |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速功率Switc |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | RJK4512DPE-00-J3 |
REJ03G1540-0100 Rev.1.00 Apr 10, 2007
Page 1 of 3
RJK4512DPE
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1540-0100
Rev.1.00
Apr 10, 2007
Features
Low on-resistance
Low leakage current
High speed switching
Outline
123
4
RENESAS Package code:
PRSS0004AE-B
(Package name:
LDPAK(S)-(1) )
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP
E
AR
Pch
Note2
θ
ch-c
Tch
Tstg
Ratings
450
±
30
14
42
14
42
3
0.5
100
1.25
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
≤
150
°
C
Note1
Note1
Note3
Note3
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