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參數(shù)資料
| 型號： | RJK5012DPP-00-T2 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 110K |
| 代理商： | RJK5012DPP-00-T2 |
REJ03G1545-0100 Rev.1.00 May 10, 2007
Page 1 of 6
RJK5012DPP
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1545-0100
Rev.1.00
May 10, 2007
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code:
PRSS0003AB-A
(Package name:
TO-220FN)
1
23
D
S
G
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP
E
AR
Pch
Note2
θ
ch-c
Tch
Tstg
Ratings
500
±
30
12
24
12
24
4
0.88
30
4.17
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
≤
150
°
C
4. Limited by maximum safe operation area
Note4
Note1
Note1
Note3
Note3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RJK5012DPP-E0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:500V - 12A - MOS FET High Speed Power Switching |
| RJK5012DPP-E0T2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:500V - 12A - MOS FET High Speed Power Switching |
| RJK5012DPP-M0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| RJK5012DPP-M0#T2 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 500V 12A TO220 |
| RJK5013DPE | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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