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參數(shù)資料
| 型號： | RIC7113E4 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER |
| 中文描述： | 抗輻射高端和低端柵極驅(qū)動器 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 168K |
| 代理商： | RIC7113E4 |
RIC7113E4
www.irf.com
5
International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment
for Single Event Effects (SEE). Single Event Effects characterization data is illustrated below. For Static Bias
Test Conditions refer to figure 8.
Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (degrees)
@V
=-10V @V
=-15V @V
=-17.5V
Br
37
284 0 400 400 400
I
60
344 0 325 250 200
Au
82
346 0 250 200 175
I
85
344 45
400
Au
100
346 35
400
LET
Energy Angle
V
S
(V)
400
400
350
350
Note: VCC/VDD = 20V, except for LET=100, then VCC/VDD = 17.5V
Single Event Effect, Safe Operating Area
Radiation characteristics
STATIC BIAS
0
50
100
150
200
250
300
350
400
450
-10
-15
-17.5
VB (V)
V
Br, 0
°
angle
I, 0
°
angle
Au, 0
°
angle
I, 45
°
angle
Au, 35
°
angle
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