參數(shù)資料
型號(hào): RIC7113E4
廠商: International Rectifier
英文描述: RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
中文描述: 抗輻射高端和低端柵極驅(qū)動(dòng)器
文件頁數(shù): 3/9頁
文件大?。?/td> 168K
代理商: RIC7113E4
RIC7113E4
www.irf.com
3
Tj = 25
°
C
Tj =
-55 to 125
°
C
Symbol
Parameter
Min. Typ. Min.
Max.
Units
Test Conditions
V
IH
Logic
1
Input Voltage
3.1
3.3
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
V
IN
=V
IH,
I
O
= 0A
V
IN
=V
IH,
I
O
= 0A
V
B
= V
S
= 400V
V
IN
=0V
or V
DD
V
IN
=0V
,
or V
DD
V
IN
=0V
,
or V
DD
V
IN
= V
DD
V
IN
= 0V
6.4
6.8
9.5
10
V
12.5
13.3
V
IL
Logic
0
Input Voltage
1.8
1.7
3.8
3.6
6.0
5.7
V
8.3
7.9
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
BSUV+
High Level Output Voltage, V
BIAS
- V
O
Low Level Output Voltage, V
O
Offset Supply Leakage Current
1.2
1.5
0.1
0.1
50
250
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Quiescent V
DD
Supply Current
Logic
1
Input Bias Current
230
500
μA
340
600
30
60
40
70
Logic
0
Input Bias Current
V
BS
Supply Undervoltage Positive
Going Threshold
V
BS
Supply Undervoltage Negative
Going Threshold
V
CC
Supply Undervoltage Positive
Going Threshold
V
CC
Supply Undervoltage Negative
Going Threshold
Output High Short Circuit Pulsed
Current
Output Low Short Circuit Pulsed
Current
1.0
7.5 9.7
10
V
BSUV-
7.0 9.4
V
CCUV+
7.4 9.6
V
V
CCUV-
7.0 9.4
I
O+
2.0
V
O
= 0V, V
IN
= V
DD
PW < 10 μs
V
O
= 15V, V
IN
= 0V
PW < 10 μs
A
I
O-
2.0
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, unless otherwise specified. The VIN, VTH and IIN parameters are refer-
enced to VSS and are applicable to all three logic input pins: HIN, LIN and SD. The VO and IO parameters
are referenced to COM or VS and are applicable to the respective output pins: HO or LO.
Pre-Irradiation
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