參數(shù)資料
型號(hào): RFT1P06E
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET
中文描述: 1.4 A, 60 V, 0.285 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 82K
代理商: RFT1P06E
4-171
File Number
4495.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFT1P06E
1.4A, 60V 0.285 Ohm, ESD Rated,
P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49044.
Features
1.4A, 60V
r
DS(ON)
= 0.285
2kV ESD Protected
Temperature Compensating PSPICE
Model
SPICE Thermal Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
150
o
C Operating Temperature
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
SOT-223
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFT1P06E
SOT-223
R1P06E
NOTE: RFT1P06E is available only in tape and reel.
D
G
S
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
Data Sheet
August 1999
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