參數(shù)資料
型號: RFT2P03LT
廠商: HARRIS SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.1A I(D) | SOT-223
中文描述: 2100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 1/9頁
文件大小: 91K
代理商: RFT2P03LT
7-7-19
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFT2P03L
2.1A, 30V 0.150 Ohm, P-Channel Logic
Level, Power MOSFET
This product is a P-Channel power MOSFET manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. This transistor can be operated directly
from integrated circuits.
Formerly developmental type TA49222.
Features
2.1A, 30V
r
DS(ON)
= 0.150
Temperature Compensating PSPICE
Model
Thermal Impedance SPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
SOT-223
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFT2P03L
SOT-223
2P03L
NOTE: RFT2P03L is available only in tape and reel. Use the entire
part number and add the suffix T.
D
G
S
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
July 1999
File Number
4574.2
Data Sheet
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