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參數(shù)資料
| 型號： | RFP8P06LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω，額定靜電釋放P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | RFP8P06LE |
7-11
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD8P06LE, RFD8P06LESM, RFP8P06LE
8A, 60V 0.300 Ohm, ESD Rated, Logic
Level, P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49203.
Features
8A, 60V
r
DS(ON)
= 0.300
2kV ESD Protected
Temperature Compensating PSPICE
Model
PSPICE Thermal Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD8P06LE
TO-251AA
F8P6LE
RFD8P06LESM
TO-252AA
F8P6LE
RFP8P06LE
TO-220AB
FP8P06LE
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-252AA variant in the tape and reel, i.e.,
RFD8P06LESM9A.
D
G
S
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
File Number
4273.1
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