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參數(shù)資料
| 型號： | RFP8P10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET(8A, 100V, 0.400 Ω,P溝道增強(qiáng)模式功率MOS場效應(yīng)管) |
| 中文描述： | 8 A, 100 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 40K |
| 代理商： | RFP8P10 |
4-165
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFP8P10
8A, 100V 0.400 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17511.
Features
8A, 100V
r
DS(ON)
= 0.400
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8P10
TO-220AB
RFP8P10
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
July 1999
File Number
1496.2
Data Sheet
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