參數(shù)資料
型號(hào): RFP6P10
廠商: Electronic Theatre Controls, Inc.
英文描述: P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
中文描述: P通道增強(qiáng)型功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 310K
代理商: RFP6P10
1
File Number
1490.2
RFP6P08, RFP6P10
-6A, -80V and -100V, 0.600 Ohm,
P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for high speed
applications such as switching regulators, switching
convertors, relay drivers, and drivers for high power bipolar
switching transistors.
Formerly developmental type TA09046.
Features
-6A, -80V and -100V
r
DS(ON)
= 0.600
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP6P08
TO-220AB
RFP6P08
RFP6P10
TO-220AB
RFP6P10
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Data Sheet
October 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關(guān)PDF資料
PDF描述
RFP6P10 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
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參數(shù)描述
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