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參數(shù)資料
| 型號： | RFD8P05SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 8 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | RFD8P05SM |
4-112
File Number
2384.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFD8P05, RFD8P05SM, RFP8P05
8A, 50V 0.300 Ohm, P-Channel Power
MOSFETs
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09832.
Features
8A, 50V
r
DS(ON)
= 0.300
UIS SOA Rating Curve
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD8P05
TO-251AA
D8P05
RFD8P05SM
TO-252AA
D8P05
RFP8P05
TO-220AB
RFP8P05
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.,
RFD8P05SM9A.
D
G
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
July 1999
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PDF描述 |
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| RFP8P06E | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs(8A, 60V, 0.300 Ω,P溝道功率MOS場效應(yīng)管) |
| RFD8P06E | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06ESM | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06LE | 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
| RFD8P06LESM | 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD8P05SM9A | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD8P05SM9AS2463 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD8P06 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFD8P06E_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
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