參數(shù)資料
型號: RFL1N10L
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
中文描述: 100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 1/5頁
文件大?。?/td> 29K
代理商: RFL1N10L
1
Features
1A, 100V
r
DS(ON)
= 1.200
Description
This is an N-Channel enhancement mode silicon gate power
field effect transistor specifically designed for use with logic
level (5V) driving sources in applications such as program-
mable controllers, automotive switching, and solenoid driv-
ers. This performance is accomplished through a special
gate oxide design which provides full rated conduction at
gate biases in the 3V to 5V range, thereby facilitating true
on-off power control directly from logic circuit supply volt-
ages.
Formerly developmental type TA09524.
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N10L
TO-205AF
RFL1N10L
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(CASE)
SOURCE
GATE
September 1998
File Number
1510.3
RFL1N10L
1A, 100V, 1.200 Ohm, Logic Level, N-Channel
Power MOSFET
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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