參數(shù)資料
型號(hào): RFL1N12L
廠商: HARRIS SEMICONDUCTOR
元件分類(lèi): 小信號(hào)晶體管
英文描述: 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述: 1000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 31K
代理商: RFL1N12L
7-1
Semiconductor
Features
1A, 120V and 150V
r
DS(ON)
= 1.900
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and sole-
noid drivers. This performance is accomplished through a
special gate oxide design which provides full rated conduc-
tion at gate biases in the 3V to 5V range, thereby facilitating
true on-off power control directly from logic circuit supply
voltages.
Formerly developmental type TA09528.
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N12L
TO-205AF
RFL1N12L
RFL1N15L
TO-205AF
RFL1N15L
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(CASE)
SOURCE
GATE
September 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
RFL1N12L,
RFL1N15L
1A, 120V and 150V, 1.900 Ohm,
Logic Level, N-Channel Power MOSFETs
File Number
1513.2
[ /Title
(RFL1N
12L,
RFL1N1
5L)
/Subject
(1A,
120V
and
150V,
1.900
Ohm,
Logic
Level,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor,
Logic
Level,
N-Chan-
nel
Power
MOS-
FETs,
TO-
205AF)
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