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參數(shù)資料
| 型號： | RF1S42N03LSM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 112K |
| 代理商： | RF1S42N03LSM |
6-267
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP42N03L, RF1S42N03LSM
42A, 30V 0.025 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49030.
Features
42A, 30V
r
DS(ON)
= 0.025
Temperature Compensating PSPICE
Model
Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP42N03L
TO-220AB
FP42N03L
RF1S42N03LSM
TO-263AB
F42N03L
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix,9A,to
obtain the TO-263AB variant in tape and reel, e.g., RF1S42N03LSM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
4302.2
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| RF1S45N02L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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| RF1S45N02LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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