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參數(shù)資料
| 型號： | RFP45N03L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 100K |
| 代理商： | RFP45N03L |
7-1
Semiconductor
RFP45N03L,
RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm,
Logic Level, N-Channel Power MOSFETs
September 1998
Features
45A, 30V
r
DS(ON)
= 0.022
Temperature CompensatingPSPICE Model
Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum utili-
zation of silicon, resulting in outstanding performance. They
were designed for use in applications such as switching reg-
ulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49030.
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N03L
TO-220AB
FP45N03L
RF1S45N03L
TO-262AA
F45N03L
RF1S45N03LSM
TO-263AB
F45N03L
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
4005.2
[ /Title
(RFP45
N03L,
RF1S45
N03L,
RF1S45
N03LS
M)
/Subject
(45A,
30V,
0.022
Ohm,
相關(guān)PDF資料 |
PDF描述 |
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| RF1S45N03L | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RF1S45N03LSM | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP4N05L | 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP4N06L | 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP4N05 | 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP45N06 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP45N06_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFP45N06_Q | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP45N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP45N06S2497 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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