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參數(shù)資料
| 型號(hào)： | R5F6420ELFB |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP100 |
| 封裝： | 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100 |
| 文件頁(yè)數(shù)： | 64/98頁(yè) |
| 文件大小： | 677K |
| 代理商： | R5F6420ELFB |
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REJ03B0236-0050 Rev.0.50 Jul 31, 2008
Page 67 of 96
Under development
Preliminary Specification
This is a preliminary specification and is subject to change.
R32C/120 Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasure per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If a word write is performed in different 16 addresses in a block and then the block is erased, it
is considered the programming/erasure is performed just once. However a write in the same
address more than once for one erasure is disabled. (overwrite disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
This data retention includes the following 10000 hours: 3000 hours in Ta = 125°C and 7000 hours in
Ta = 85°C.
4.
Please contact a Renesas sales office regarding data retention time other than the above.
Table 5.9
E2data Flash Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
—
Programming and erasure endurance of flash memory (1)
100000
times
—
Word program time
100
2000
s
—
Block erasure time
32 Kbyte block
15
200
ms
tPS
Flash memory circuit start-up stabilization time
35
50
s
—
Data retention (2)
Ta = 55°C (3, 4)
20
years
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相關(guān)代理商/技術(shù)參數(shù) |
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| R5F6420FJFB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU |
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| R5F64210KFB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU |
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