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參數(shù)資料
| 型號(hào)： | R5F36CAKNFA |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 32 MHz, MICROCONTROLLER, PQFP100 |
| 封裝： | 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100 |
| 文件頁數(shù)： | 47/92頁 |
| 文件大?。?/td> | 769K |
| 代理商： | R5F36CAKNFA |
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REJ03B0277-0100 Rev.1.00 Jul.15, 2009
Page 51 of 90
M16C/6C Group
5. Electrical Characteristics
Notes:
1.
VCC1 = 2.7 to 5.5 V at Topr = 0 to 60°C unless otherwise specified.
2.
Definition of program and erase cycles
The program and erase cycles refer to the number of per-block erasures.
If the program and erase cycles are n (n=10,000), each block can be erased n times.
For example, if a 4 Kbyte block is erased after writing two word data 1,024 times, each to a different address, this
counts as one program and erase cycles. Data cannot be written to the same address more than once without
erasing the block (rewrite prohibited).
3.
Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be
minimized by programming up to 128 groups before erasing them all in one operation. In addition, averaging the
erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain
data on the erasure cycles of each block and limit the number of erase operations to a certain number.
5.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
6.
Customers desiring program/erase failure rate information should contact their Renesas technical support
representative.
7.
The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.11
Flash Memory (Data Flash) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
-
Program/erase cycles (2, 4, 5)
VCC1 = 3.3 V, Topr = 25°C
10,000 (3)
times
-
Two words program time
VCC1 = 3.3 V, Topr = 25°C
300
4000
μs
-
Lock bit program time
VCC1 = 3.3 V, Topr = 25°C
140
3000
μs
-
Block erase time
VCC1 = 3.3 V, Topr = 25°C
0.2
3.0
s
-
Program, erase voltage
2.7
5.5
V
-
Read voltage
2.7
5.5
V
-
Program, erase temperature
0
60
°C
tPS
Flash Memory Circuit Stabilization Wait Time
50
μs
-
Data hold time (7)
Ambient temperature = 55
°C
20
year
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相關(guān)代理商/技術(shù)參數(shù) |
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| R5F36CAKNFA#U0 | 功能描述:MCU 384/16KB ROM 31KB RAM 100QFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/6C 產(chǎn)品培訓(xùn)模塊:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 標(biāo)準(zhǔn)包裝:1 系列:M16C™ M32C/80/87 核心處理器:M32C/80 芯體尺寸:16/32-位 速度:32MHz 連通性:EBI/EMI，I²C，IEBus，IrDA，SIO，UART/USART 外圍設(shè)備:DMA，POR，PWM，WDT 輸入/輸出數(shù):121 程序存儲(chǔ)器容量:384KB（384K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:24K x 8 電壓 - 電源 (Vcc/Vdd):3 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 34x10b，D/A 2x8b 振蕩器型:內(nèi)部 工作溫度:-20°C ~ 85°C 封裝/外殼:144-LQFP 包裝:托盤 產(chǎn)品目錄頁面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87 |
| R5F36CAKNFB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:This MCU consumes low power, and supports operating modes that allow additional |
| R5F36CAKNFB#30 | 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 384KB FLASH 100QFP |
| R5F36CAKNFB#U0 | 功能描述:MCU 384/16KB ROM 31KB RAM 100QFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/6C 產(chǎn)品培訓(xùn)模塊:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 標(biāo)準(zhǔn)包裝:1 系列:M16C™ M32C/80/87 核心處理器:M32C/80 芯體尺寸:16/32-位 速度:32MHz 連通性:EBI/EMI，I²C，IEBus，IrDA，SIO，UART/USART 外圍設(shè)備:DMA，POR，PWM，WDT 輸入/輸出數(shù):121 程序存儲(chǔ)器容量:384KB（384K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:24K x 8 電壓 - 電源 (Vcc/Vdd):3 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 34x10b，D/A 2x8b 振蕩器型:內(nèi)部 工作溫度:-20°C ~ 85°C 封裝/外殼:144-LQFP 包裝:托盤 產(chǎn)品目錄頁面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87 |
| R5F36CAMDFA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:This MCU consumes low power, and supports operating modes that allow additional |
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