參數(shù)資料
型號： R5F36CA6DFB
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 32 MHz, MICROCONTROLLER, PQFP100
封裝： 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100
文件頁數(shù)： 49/99頁
文件大?。?/td> 759K
代理商： R5F36CA6DFB
R01DS0034EJ0200 Rev.2.00
Page 53 of 95
Feb 07, 2011
M16C/6C Group
5. Electrical Characteristics
Notes:
1.
Definition of program and erase cycles
The program and erase cycles refer to the number of per-block erasures.
If the program and erase cycles are n (n = 10,000), each block can be erased n times.
For example, if a 4 KB block is erased after writing 2 word data 1,024 times, each to a different address, this
counts as one program and erase cycles. Data cannot be written to the same address more than once without
erasing the block (rewrite prohibited).
2.
Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3.
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be
minimized by programming up to 256 groups before erasing them all in one operation. In addition, averaging the
erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain
data on the erasure cycles of each block and limit the number of erase operations to a certain number.
4.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
5.
Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office.
6.
The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.11
Flash Memory (Data Flash) Electrical Characteristics
VCC1 = 2.7 to 5.5 V at Topr = 0 to 60°C, unless otherwise specified.
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
-
Program and erase cycles (1), (3), (4) VCC1 = 3.3 V, Topr = 25°C
10,000 (2)
times
-
2 word program time
VCC1 = 3.3 V, Topr = 25°C
300
4000
μs
-
Lock bit program time
VCC1 = 3.3 V, Topr = 25°C
140
3000
μs
-
Block erase time
VCC1 = 3.3 V, Topr = 25°C
0.2
3.0
s
-
Program, erase voltage
2.7
5.5
V
-
Read voltage
2.7
5.5
V
-
Program, erase temperature
0
60
°C
tPS
Flash memory circuit stabilization wait time
50
μs
-
Data hold time (6)
Ambient temperature = 55
°C
20
year
相關PDF資料
PDF描述
R5F36CA6NFB 16-BIT, FLASH, 32 MHz, MICROCONTROLLER, PQFP100
R5F36S16DFB 16-BIT, FLASH, 32.72 MHz, MICROCONTROLLER, PQFP100
R5F36S16NFB 16-BIT, FLASH, 32.72 MHz, MICROCONTROLLER, PQFP100
R5F36S1ENFB 16-BIT, FLASH, 32.72 MHz, MICROCONTROLLER, PQFP100
R5F52106ADFF 32-BIT, FLASH, 50 MHz, MICROCONTROLLER, PQFP80
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