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參數(shù)資料
| 型號： | R5F36CA6DFA |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 32 MHz, MICROCONTROLLER, PQFP100 |
| 封裝： | 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100 |
| 文件頁數(shù)： | 97/99頁 |
| 文件大?。?/td> | 759K |
| 代理商： | R5F36CA6DFA |
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A - 2
2.00
Feb 07, 2011
49
Table 29.5 A/D Conversion Characteristics (1/2):
Added the Measuring Condition of the Resolution row.
50
Table 5.6 A/D Conversion Characteristics (2/2): Added the note 5.
52
Table 5.9 CPU Clock When Operating Flash Memory (f(BCLK)):
Added the Typ. value of the Low current consumption read mode.
52
Table 5.10 Flash Memory (Program ROM 1, 2) Electrical Characteristics:
Added a condition to the Read voltage row.
Modified note 1.
Deleted the example stated in note 4.
53
Table 5.11 Flash Memory (Data Flash) Electrical Characteristics:
Changed “128 groups” to “256 groups” in note 4.
54
Table 5.12 Voltage Detector 0 Electrical Characteristics: Added the condition in the Vdet0
row.
55
Table 5.15 Power-On Reset Circuit:
Added the Vpor1 and tw(por) row.
Deleted the Condition of trth row.
Added the last line in note 1.
55
Figure 5.5 Power-On Reset Circuit Electrical Characteristics:
Changed the signal name “0.1 V” to “Vpor1”.
Deleted note 2.
57
Table 5.17 40 MHz On-Chip Oscillator Electrical Characteristics:
Changed the Condition in the fOCO40M row.
59
Table 5.20 Electrical Characteristics (2): Added “ZP, IDU, IDV, IDW” to the VT+ - VT- row.
60
Table 5.21 Electrical Characteristics (3):
Added the During flash memory program row and During flash memory erase row.
65, 83
5.2.2.5 and 5.3.2.5 Timer S Input: Added.
67, 85
5.2.2.8 and 5.3.2.8 Multi-master I2C-bus: Added.
68
Table 5.36 Memory Expansion Mode and Microprocessor Mode:
Changed
RDY input setup time from 30.
68 to 75,
86 to 93
Table 5.36 to Table 5.39 and Table 5.56 to Table 5.59 Memory Expansion Mode and
Microprocessor Mode:
Deleted the following:
HOLD input setup time
HOLD input hold time
HLDA output delay time
69, 87
Figure 5.16 and Figure 5.29 Timing Diagram:
Deleted lower figure (Common to wait state and no wait state settings).
77
Table 5.40 Electrical Characteristics (1): Added “ZP, IDU, IDV, IDW” to the VT+ - VT- row.
78
Table 5.41 Electrical Characteristics (2):
Added the During flash memory program row and During flash memory erase row.
86
Table 5.56 Memory Expansion Mode and Microprocessor Mode:
Changed
RDY input setup time from 40.
REVISION HISTORY
M16C/6C Group Datasheet
Rev.
Date
Description
Page
Summary
All trademarks and registered trademarks are the property of their respective owners.
IEBus is a registered trademark of NEC Electronics Corporation.
HDMI and High-Definition Multimedia Interface are registered trademarks of HDMI Licensing, LLC.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| R5F36CA6DFA#U0 | 功能描述:MCU 128/16KB ROM 12KB RAM 100QFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/6C 產(chǎn)品培訓(xùn)模塊:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 標(biāo)準(zhǔn)包裝:1 系列:M16C™ M32C/80/87 核心處理器:M32C/80 芯體尺寸:16/32-位 速度:32MHz 連通性:EBI/EMI，I²C，IEBus，IrDA，SIO，UART/USART 外圍設(shè)備:DMA，POR，PWM，WDT 輸入/輸出數(shù):121 程序存儲器容量:384KB（384K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:24K x 8 電壓 - 電源 (Vcc/Vdd):3 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 34x10b，D/A 2x8b 振蕩器型:內(nèi)部 工作溫度:-20°C ~ 85°C 封裝/外殼:144-LQFP 包裝:托盤 產(chǎn)品目錄頁面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87 |
| R5F36CA6DFB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU |
| R5F36CA6DFB#30 | 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 128KB FLASH 100QFP |
| R5F36CA6DFB#U0 | 功能描述:MCU 4KB FLASH 128/16K 100-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/6C 產(chǎn)品培訓(xùn)模塊:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 標(biāo)準(zhǔn)包裝:1 系列:M16C™ M32C/80/87 核心處理器:M32C/80 芯體尺寸:16/32-位 速度:32MHz 連通性:EBI/EMI，I²C，IEBus，IrDA，SIO，UART/USART 外圍設(shè)備:DMA，POR，PWM，WDT 輸入/輸出數(shù):121 程序存儲器容量:384KB（384K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:24K x 8 電壓 - 電源 (Vcc/Vdd):3 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 34x10b，D/A 2x8b 振蕩器型:內(nèi)部 工作溫度:-20°C ~ 85°C 封裝/外殼:144-LQFP 包裝:托盤 產(chǎn)品目錄頁面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87 |
| R5F36CA6NFA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:This MCU consumes low power, and supports operating modes that allow additional |
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