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參數(shù)資料
| 型號： | R5F21368ANFP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP64 |
| 封裝： | 10 X 10 MM, 0.50 MM PITCH, PLASTIC, LQFP-64 |
| 文件頁數(shù)： | 26/57頁 |
| 文件大?。?/td> | 477K |
| 代理商： | R5F21368ANFP |
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R8C/36A Group
5. Electrical Characteristics
REJ03B0265-0110 Rev.1.10 Sep 28, 2009
Page 32 of 55
Under development Preliminary specification
Specifications in this manual are tentative and subject to change.
Notes:
1. VCC = 2.7 to 5.5 V and Topr = 0 to 60
°C, unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one. However, the same address must not be programmed more than once
per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed.)
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.7
Flash Memory (Program ROM) Electrical Characteristics
Symbol
Parameter
Conditions
Standard
Unit
Min.
Typ.
Max.
—
Program/erase endurance (2)
1,000 (3)
——
times
—
Byte program time
—
80
—
s
—
Block erase time
—
0.3
—
s
td(SR-SUS)
Time delay from suspend request until
suspend
—
5 + CPU clock
× 3 cycles
ms
—
Interval from erase start/restart until
following suspend request
33
—
ms
—
Suspend interval necessary for auto-
erasure to complete
33
—
ms
—
Time from suspend until erase restart
—
30 + CPU clock
× 1 cycle
s
—
Program, erase voltage
2.7
—
5.5
V
—
Read voltage
1.8
—
5.5
V
—
Program, erase temperature
0
—
60
°C
—
Data hold time (7)
Ambient temperature = 55
°C20
—
year
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R5F21368CDFA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU |
| R5F21368CDFA#U0 | 制造商:Renesas Electronics Corporation 功能描述:R8C36C 64+4KB 1.8/5.5V -40 TO 85C 64LQFP - Trays 制造商:Renesas Electronics Corporation 功能描述:IC MCU 16BIT 64KB FLASH 64LQFP |
| R5F21368CDFA#V0 | 功能描述:MCU 64KB ROM 6KB RAM 64-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/36C 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設(shè)備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲器容量:- 程序存儲器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR) |
| R5F21368CDFP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:RENESAS MCU |
| R5F21368CDFP#V0 | 功能描述:MCU 64KB ROM 6KB RAM 64-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:R8C/3x/36C 標(biāo)準(zhǔn)包裝:250 系列:80C 核心處理器:8051 芯體尺寸:8-位 速度:16MHz 連通性:EBI/EMI，I²C，UART/USART 外圍設(shè)備:POR，PWM，WDT 輸入/輸出數(shù):40 程序存儲器容量:- 程序存儲器類型:ROMless EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-LCC（J 形引線） 包裝:帶卷 (TR) |
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