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參數(shù)資料
| 型號： | R1LV0408CSP-7LI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Wide Temperature Range Version 4M SRAM (512-kword 】 8-bit) |
| 中文描述： | 寬溫版本4分的SRAM（512 - KWord的】8位） |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 94K |
| 代理商： | R1LV0408CSP-7LI |
R1LV0408C-I Series
Rev.2.00, May.25.2004, page 8 of 12
Write Cycle
R1LV0408C-I
-5SI
-7LI
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
t
OHZ
55
20
20
70
25
25
ns
Chip selection to end of write
50
60
ns
4
Address setup time
0
0
ns
5
Address valid to end of write
50
60
ns
Write pulse width
40
50
ns
3, 12
Write recovery time
0
0
ns
6
Write to output in high-Z
0
0
ns
1, 2, 7
Data to write time overlap
25
30
ns
Data hold from write time
0
0
ns
Output active from end of write
5
5
ns
2
Output disable to output in high-Z
Notes: 1. t
HZ
, t
OHZ
and t
WHZ
are defined as the time at which the outputs achieve the open circuit conditions
and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. A write occurs during the overlap (t
WP
) of a low CS# and a low WE#. A write begins at the later
transition of CS# going low or WE# going low. A write ends at the earlier transition of CS# going
high or WE# going high. t
WP
is measured from the beginning of write to the end of write.
4. t
CW
is measured from CS# going low to the end of write.
5. t
AS
is measured from the address valid to the beginning of write.
6. t
WR
is measured from the earlier of WE# or CS# going high to the end of write cycle.
7. During this period, I/O pins are in the output state so that the input signals of the opposite phase
to the outputs must not be applied.
8. If the CS# low transition occurs simultaneously with the WE# low transition or after the WE#
transition, the output remain in a high impedance state.
9. Dout is the same phase of the write data of this write cycle.
10. Dout is the read data of next address.
11. If CS# is low during this period, I/O pins are in the output state. Therefore, the input signals of
the opposite phase to the outputs must not be applied to them.
12. In the write cycle with OE# low fixed, t
WP
must satisfy the following equation to avoid a problem of
data bus contention. t
WP
≥
t
DW
min + t
WHZ
max
0
0
ns
1, 2, 7
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PDF描述 |
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| R3111H091A | LOW VOLTAGE DETECTOR |
| R3111Q091A | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Brown; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| R3111Q091A-T1 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Gray; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| R3111Q091A-TR | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Purple; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| R3111Q091A-TZ | Hook-Up Wire; Conductor Size AWG:26; No. Strands x Strand Size:7 x 34; Jacket Color:Brown; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R1LV0408CSP-7LI#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 512K x 8 70ns 32-Pin SOP |
| R1LV0408CSP-7LI#S0 | 功能描述:IC SRAM 4MBIT 70NS 32SOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| R1LV0408CSP-7LI(#B0) | 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 512K x 8 70ns 32-Pin SOP |
| R1LV0408D | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:4M SRAM (512-kword 】 8-bit) |
| R1LV0408DSA-5SI | 制造商:Renesas Electronics Corporation 功能描述:Memory,SRAM,LowPower,4Mb,512kx8,TSOP32 |
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