參數(shù)資料
型號(hào)： R1LV0408CSP-7LI
廠商： Hitachi,Ltd.
英文描述： Wide Temperature Range Version 4M SRAM (512-kword 】 8-bit)
中文描述： 寬溫版本4分的SRAM（512 - KWord的】8位）
文件頁(yè)數(shù)： 12/14頁(yè)
文件大?。?/td> 94K
代理商： R1LV0408CSP-7LI
R1LV0408C-I Series
Rev.2.00, May.25.2004, page 12 of 12
Low V
CC
Data Retention Characteristics
(Ta =
40 to +85
°
C)
Parameter
Symbol Min Typ
Max Unit Test conditions
*
3
V
CC
for data retention
Data
retention
current
V
DR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
I
CCDR
t
CDR
t
R
2.0
0
t
RC
*
4
10
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
ns
CS#
≥
V
CC
0.2 V, Vin
≥
0 V
V
CC
= 3.0 V, Vin
≥
0 V
CS#
≥
V
CC
0.2 V
to +85
°
C
to +70
°
C
to +40
°
C
to +25
°
C
to +85
°
C
to +70
°
C
to +40
°
C
to +25
°
C
0.7
*
2
3
0.5
*
1
3
0.7
*
2
10
0.5
*
1
10
8
5SI
20
16
7LI
Chip deselect to data retention time
See retention waveform
Operation recovery time
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and specified loading, and not guaranteed.
2. Typical values are at V
CC
= 3.0 V, Ta = +40
°
C and specified loading, and not guaranteed.
3. CS# controls address buffer, WE# buffer, OE# buffer, and Din buffer. In data retention mode,
Vin levels (address, WE#, OE#, I/O) can be in the high impedance state.
4. t
RC
= read cycle time.
ns
Low V
CC
Data Retention Timing Waveform
(CS# Controlled)
V
CC
2.7 V
2.2 V
V
DR
0 V
CS#
t
CDR
t
R
CS#
≥
V
CC
– 0.2 V
Data retention mode
相關(guān)PDF資料
PDF描述
R3111H091A LOW VOLTAGE DETECTOR
R3111Q091A Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Brown; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
R3111Q091A-T1 Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Gray; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
R3111Q091A-TR Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Purple; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
R3111Q091A-TZ Hook-Up Wire; Conductor Size AWG:26; No. Strands x Strand Size:7 x 34; Jacket Color:Brown; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
R1LV0408CSP-7LI#B0 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 512K x 8 70ns 32-Pin SOP
R1LV0408CSP-7LI#S0 功能描述:IC SRAM 4MBIT 70NS 32SOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
R1LV0408CSP-7LI(#B0) 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 4M-Bit 512K x 8 70ns 32-Pin SOP
R1LV0408D 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:4M SRAM (512-kword 】 8-bit)
R1LV0408DSA-5SI 制造商:Renesas Electronics Corporation 功能描述:Memory,SRAM,LowPower,4Mb,512kx8,TSOP32
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