參數(shù)資料
型號: QSD122
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光敏三極管
英文描述: PLASTIC SILICON INFRARED PHOTOTRANSISTOR
中文描述: PHOTO TRANSISTOR DETECTOR
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/4頁
文件大?。?/td> 93K
代理商: QSD122
0.195 (4.95)
0.040 (1.02)
NOM
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
COLLECTOR
0.800 (20.3)
MIN
0.100 (2.54) NOM
0.500 (1.25)
EMITTER
PACKAGE DIMENSIONS
FEATURES
NPN Silicon Phototransistor
Package Type: T-1 3/4
Notched Emitter: QED12X/QED22X/QED23X
Narrow Reception Angle: 24°C
Daylight Filter
Package Material and Color: Black Epoxy
High Sensitivity
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
EMITTER
COLLECTOR
SCHEMATIC
DESCRIPTION
The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.
QSD122
QSD123
QSD124
2001 Fairchild Semiconductor Corporation
DS300361
7/20/01
1 OF 4
www.fairchildsemi.com
相關(guān)PDF資料
PDF描述
QSD123 PLASTIC SILICON INFRARED PHOTOTRANSISTOR
QSD123 PLASTIC SILICON PHOTOTRANSISTOR
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QSD122 PLASTIC SILICON PHOTOTRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QSD122_Q 功能描述:光電晶體管 1mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSD122A4R0 功能描述:光電晶體管 Phototrans IR Chip NPN Transistor 880nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSD123 功能描述:光電晶體管 4mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSD123_Q 功能描述:光電晶體管 4mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSD123A4R0 功能描述:光電晶體管 Phototrans IR Chip NPN Transistor 880nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1