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參數(shù)資料
| 型號： | QSB320 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC, LCC-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 50K |
| 代理商： | QSB320 |
PARAMETER
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
TEST CONDITIONS
SYMBOL
MIN
—
400
—
—
30
5
16
—
—
—
TYP
880
—
120
—
—
—
—
—
8
8
MAX
—
1000
—
200
—
—
—
0.3
—
—
UNITS
nm
nm
Deg.
D
PS
D
SR
0
I
D
BV
CEO
BV
ECO
I
C (ON)
V
CE (SAT)
t
r
t
f
V
CE
= 25 V, E
e
= 0
I
C
= 1 mA
I
E
= 100 μA
E
e
= 0.1 mW/cm
2
(4)
, V
CE
= 5 V
E
e
= 0.5 mW/cm
2
(4)
, I
C
= 0.05 mA
V
CC
= 5 V, R
L
= 100
1
I
C
= 1 mA
nA
V
V
μA
V
μs
μs
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C)
NOTES
1. Derate power dissipation linearly
2.2 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4.
D
= 940 nm.
Parameter
Symbol
T
OPR
T
STG
T
SOL-F
V
CE
V
EC
I
C
P
D
Rating
-55 to +100
-55 to +100
260 for 10 sec
35
5
15
165
Unit
°C
°C
°C
V
V
mA
mW
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)
(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Power Dissipation
(1)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.035 (0.9)
0.028 (0.7)
0.083 (2.1)
0.067 (1.7)
0.041 (0.1)
0.134 (3.4)
0.118 (3.0)
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
0.043 (1.1)
0.020 (0.5)
0.094 (2.4)
COLLECTOR
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
Surface Mount PLCC-2 Package
Wide Reception Angle, 120
°
High Sensitivity
Phototransistor Output
Matched Emitter: QEB421
SCHEMATIC
EMITTER
COLLECTOR
QSB320
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
2001 Fairchild Semiconductor Corporation
DS300386
2/26/01
1 OF 3
www.fairchildsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSB320_Q | 功能描述:光電晶體管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB320F | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR |
| QSB320FTR | 功能描述:光電晶體管 Silicon Infrared Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB320TR | 功能描述:光電晶體管 Phototransistor SMD Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB34 | 功能描述:光電二極管 PHOTOSENSOR PIN DIODE SMT RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
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