參數(shù)資料
型號: QM75DY-24B
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 4/5頁
文件大?。?/td> 95K
代理商: QM75DY-24B
Feb.1999
2
10
1
10
0
10
–3
10
–2
10
–1
10
0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
1
10
2
10
3
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
1
10
7
5
4
3
2
10
7
5
4
3
3 4 5 7
0
10
2 3 4 5 7
1
10
3
2
2 3
t
s
t
f
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
C
=75A
I
B1
=150mA
160
40
00
400
80
800
1200
200
600
1000
1400
100
60
20
–I
B2
=1A
T
j
=125°C
140
120
7
5
3
2
7
5
3
2
7
5
3
2
2
200μ
S
100μ
S
DC
1m
S
50μ
S
T
C
=25°C
NON-REPETITIVE
7
5
3
2
7
5
3
2
7
5
3
2
0.04
0.08
0.16
0.20
0.24
0.28
0.32
0
3
2
7
5
3
2
7
5
0.12
100
90
60
50
40
20
00
160
20
40
60
80 100 120 140
80
10
70
30
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
C
MITSUBISHI TRANSISTOR MODULES
QM75DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相關(guān)PDF資料
PDF描述
QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE
QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE
QM75DY-2H HIGH POWER SWITCHING USE INSULATED TYPE
QM75DY-HB HIGH POWER SWITCHING USE INSULATED TYPE
QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE
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