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參數(shù)資料
| 型號(hào)： | QM75DY-HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 85K |
| 代理商： | QM75DY-HB |
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
QM75DY-HB
I
C
V
CEX
h
FE
Insulated Type
UL Recognized
Collector current ..........................
75A
Collector-emitter voltage ...........
600V
DC current gain.............................
750
Yellow Card No. E80276 (N)
File No. E80271
94
80
20
20
20
3
1
4
4
1
7
3–M5
2–
φ
6.5
C
2
E
1
E
2
C
1
E
2
B
2
B
1
E
1
3
(
20
16
20
4
4
Tab#110, t=0.5
2
6
LABEL
C
2
E
1
E
2
B
2
E
2
C
1
E
1
B
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM75DY-H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C) |
| QM75DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C) |
| QM75DY2HB | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |
| QM75E2Y-2H | HIGH POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM75E2Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |
| QM75E2Y-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E2Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E3Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |
| QM75E3Y-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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