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參數(shù)資料
| 型號： | QM50TB-2HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 122 x 32 pixel format, Compact LCD size |
| 中文描述： | 中功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 86K |
| 代理商： | QM50TB-2HB |
Feb.1999
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T
j
=125°C
I
B2
=–1A
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T
j
=25°C
T
j
=125°C
t
s
t
f
V
CC
=600V
I
C
=50A
I
B1
=100mA
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4
T
=25°C
NON–REPETITIVE
50μ
S
DC
1m
S
100
90
60
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00
160
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80 100 120 140
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0
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0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
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5
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457
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM50TB-2H | 122 x 32 pixel format, Compact LCD size |
| QM50TB24 | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) |
| QM50TB24B | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) |
| QM50TB2HB | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 50A I(C) |
| QM50TF-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM50TF-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50TX-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50TX-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM52103C240F5 | 制造商:Xilinx 功能描述:A0720849 |
| QM5210-3C240F5 | 制造商:Xilinx 功能描述:A0720849 |
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