參數(shù)資料
      型號: Q67220-H1059
      廠商: SIEMENS AG
      英文描述: ISDN DC Converter Circuit IDCC
      中文描述: 綜合業(yè)務(wù)數(shù)字網(wǎng)DC轉(zhuǎn)換器電路IDCC
      文件頁數(shù): 20/25頁
      文件大?。?/td> 145K
      代理商: Q67220-H1059
      PEB 2023
      PEF 2023
      Electrical Characteristics
      Semiconductor Group
      20
      08.97
      3
      Electrical Characteristics
      3.1
      Absolute Maximum Ratings
      Note:
      Maximum ratings are absolute ratings; exceeding only one of these values may
      cause irreversible damage to the integrated circuit.
      Note:
      If not otherwise stated than this absolute maximum values are static values.
      For overvoltage protection (pin V
      S
      respectively UV and UVx) see chapter
      1.6 Surge Protection
      .
      Parameter
      Symbol
      Limit Values
      Unit
      Test Condition
      min.
      max.
      Supply voltage (pin V
      S
      ) for
      sup. voltage range 1
      V
      S1
      -0.3
      80
      V
      Referred to GND
      Supply voltage (pin V
      S
      ) for
      sup. voltage range 2 or 3
      V
      S2,3
      -0.3
      90
      V
      Referred to GND
      Transient input current
      on pin V
      S
      (sup. voltage
      range 1, 2 or 3)
      i
      Vs
      -10
      -30
      10
      30
      mA
      mA
      t
      100 msec
      t
      10 msec
      Analog input voltage
      (pins I
      P
      , COMP, V
      P
      , V
      N
      ,
      SYNC, RC)
      V
      I A
      -0.3
      V
      EXT
      +0.3
      V
      Referred to GND
      Reference output current
      (pin V
      REF
      )
      SYNC-output current
      (pin SYNC)
      I
      O REF
      5
      mA
      I
      O SYNC
      5
      mA
      Error amplifier output
      current (pin COMP)
      I
      O COMP
      5
      mA
      Z-current (pin V
      EXT
      )
      Output current (pin V
      EXT
      )
      Driver output current
      (pin GA)
      I
      Z EXT
      I
      O EXT
      I
      O DR
      6
      mA
      6
      mA
      25
      mA
      Undervoltage detection
      input currents
      (pins UV, UVx)
      I
      UV
      , I
      UVx
      i
      UV
      , i
      UVx
      -10
      1
      10
      mA
      mA
      t
      10 msec
      Junction temperature
      T
      j
      T
      stg
      0
      150
      °C
      Storage temperature
      -40
      150
      °C
      ESD-voltage, all pins
      1
      k V
      Human body
      model
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