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參數(shù)資料
| 型號： | Q67060-S7010-A2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 通用總線功能 |
| 英文描述： | High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SO -55 to 125 |
| 中文描述： | 智能雙通道阻抗高側(cè)電源開關(guān) |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 304K |
| 代理商： | Q67060-S7010-A2 |
GND disconnect
BTS 707
Semiconductor Group
8
2003-Oct-01
PROFET
V
IN
ST
OUT
GND
bb
Vbb
VINVST
VGND
Any kind of load. In case of IN
=
high is
V
OUT
≈
V
IN
-
V
IN(T+)
.
Due to V
GND
>
0, no V
ST
= low signal available.
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb
VGND
VINVST
Any kind of load. If V
GND
>
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
>
0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
high
For an inductive load current up to the limit defined by EAS
(max. ratings ) each switch is protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load
current flows through the GND connection.
Inductive load switch-off energy
dissipation
E
bb
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
EAS
L
R
ELoad
RL
L
{
L
Z
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
= I
L
·
L
2
·
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
·
R
L
|V
OUT(CL)
| )
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