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參數(shù)資料
| 型號： | Q67060-S7007A2 |
| 英文描述： | TRANSISTOR SMD PROFET LESITUNGS MOSFET |
| 中文描述： | 晶體管貼片MOSFET的普羅費LESITUNGS |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 138K |
| 代理商： | Q67060-S7007A2 |
13.07.1998
Semiconductor Group
Page 4
BTS 117
Electrical Characteristics
Parameter
at T
j
=25°C, unless otherwise specified
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V, V
DS
= 12 V
Current limit
1)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 350 μs,
T
j
= -40...+150 °C
I
D(SCp)
-
25
-
A
I
D(lim)
7
10
15
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7
, V
IN
= 0 to 10 V, V
bb
= 12 V
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7
, V
IN
= 10 to 0 V, V
bb
= 12 V
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7
, V
IN
= 0 to 10 V, V
bb
= 12 V
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7
, V
IN
= 10 to 0 V, V
bb
= 12 V
μs
t
on
40
70
-
-
t
off
70
150
V/μs
-dV
DS
/dt
on
3
1
-
1
3
dV
DS
/dt
off
-
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
I
D
= 3.5 A, T
j
= 25 °C, V
bb
= 32 V
I
D
= 3.5 A, T
j
= 150 °C, V
bb
= 32 V
T
jt
E
AS
°C
mJ
165
--
--
-
150
1000
225
--
--
Inverse Diode
Inverse diode forward voltage
I
F
= 5*3.5A, t
m
= 300
μ
s, V
IN
= 0 V
V
SD
1
-
-
V
1
Device switched on into existing short circuit (see diagram Determination of ID(lim). Dependant on the application, these values
might be exceeded for max. 50 μs in case of short circuit occurs while the device is on condition
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