參數(shù)資料
型號(hào): Q62703-Q1662
廠商: SIEMENS AG
英文描述: Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 75pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
中文描述: 發(fā)動(dòng)器,紅外Lumineszenzdioden 880納米紅外輻射器的GaAIAs 880納米
文件頁數(shù): 7/8頁
文件大小: 552K
代理商: Q62703-Q1662
Semiconductor Group
7
LSG K370, LSP K370, LOP K370, LOG K370
Maximal zulssiger Durchlastrom
Max. permissible forward current
I
F
=
f
(
T
A
)
Dominantwellenlnge
λ
dom
=
f
(
T
A
)
Dominant wavelength
I
F
= 20 mA
Wellenlnge der Stahlung
λ
peak
=
f (T
A
)
Wavelength at peak emission
I
F
= 20 mA
Durchlaspannung
V
F
=
f
(
T
A
)
Forward voltage
I
F
= 15 mA
相關(guān)PDF資料
PDF描述
Q62703-Q1663 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
Q62703-Q1664 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
Q62703-Q1665 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
Q62703-Q1667 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 75pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
Q62703-Q1668 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
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