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參數(shù)資料
| 型號： | Q62703-Q1662 |
| 廠商： | SIEMENS AG |
| 英文描述： | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 75pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| 中文描述： | 發(fā)動器，紅外Lumineszenzdioden 880納米紅外輻射器的GaAIAs 880納米 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 552K |
| 代理商： | Q62703-Q1662 |
Semiconductor Group
3
Grenzwerte
2)
Maximum Ratings
2)
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS, LO, LG
LP
Betriebstemperatur
Operating temperature range
T
op
– 55 ... + 100
– 55 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
– 55 ... + 100
– 55 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
+ 100
C
Durchlastrom
Forward current
I
F
40
30
mA
Stostrom
Surge current
t
≤
10
μ
s, D = 0.005
Verlustleistung
Power dissipation
T
A
≤
25
°
C
Wrmewiderstand
Thermal resistance
Sperrschicht / Luft
Junction / air
I
FM
0.5
0.5
A
P
tot
140
100
mW
R
th JA
400
400
K/W
2)
Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhngig vom
Betriebszustand des anderen.
2)
The stated maximum ratings refer to the specified chip regardless of the other one’s operating status.
LSG K370, LSP K370, LOP K370, LOG K370
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62703-Q1663 | GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm |
| Q62703-Q1664 | GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm |
| Q62703-Q1665 | GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm |
| Q62703-Q1667 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 75pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| Q62703-Q1668 | GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62703Q1669 | 制造商:OSRAM 功能描述:EMITTER, IR, TO-18, GAALAS, - Bulk |
| Q62703Q1724 | 制造商:OSRAM 功能描述:LED YELLOW 587NM CLEAR SMD |
| Q62703Q1756 | 制造商:OSRAM 功能描述:LED IrLED 880nm 2-Pin T-1 3/4 T/R 制造商:OSRAM 功能描述:LED IRLED 880NM 2PIN T-1 3/4 - Bulk 制造商:OSRAM 功能描述:EMITTER GAALAS 880NM 5MM RADIAL 制造商:OSRAM Opto Semiconductors 功能描述:LED IrLED 880nm 2-Pin T-1 3/4 T/R |
| Q62703Q1820 | 制造商:OSRAM 功能描述:LED IrLED 950nm 2-Pin T-1 3/4 制造商:OSRAM 功能描述:LED IRLED 950NM 2PIN T-1 3/4 - Bulk 制造商:OSRAM 功能描述:EMITTER IR 950NM 5MM 制造商:OSRAM Opto Semiconductors 功能描述:LED IrLED 950nm 2-Pin T-1 3/4 |
| Q62703Q1853 | 制造商:OSRAM 功能描述:EMITTER,UL APPROVED, GAALAS IR - Tape and Reel |
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