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參數資料
| 型號： | PZT751T3 |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-261AA |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁|甲一（c）|至261AA |
| 文件頁數： | 2/8頁 |
| 文件大小： | 54K |
| 代理商： | PZT751T3 |
PZT751T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60
—
Vdc
Collector–Emitter Breakdown Voltage
(I
C
= 100
μ
Adc, I
E
= 0)
V
(BR)CBO
80
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc, I
C
= 0)
V
(BR)EBO
5.0
—
Vdc
Base–Emitter Cutoff Current
(V
EB
= 4.0 Vdc)
I
EBO
—
0.1
μ
Adc
Collector–Base Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
—
100
nAdc
ON CHARACTERISTICS (2)
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 2.0 Vdc)
h
FE
75
75
75
40
—
—
—
—
—
Collector–Emitter Saturation Voltages
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
CE(sat)
—
—
0.5
0.3
Vdc
Base–Emitter Voltages
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
—
1.0
Vdc
Base–Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
BE(sat)
—
1.2
Vdc
Current–Gain–Bandwidth
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle = 2.0%.
f
T
75
—
MHz
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